Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Greater Noida (Uttar Pradesh) [India], December 16: Galgotias University has taken a decisive and future-shaping step in transforming higher education in India with the launch of advanced ...
Abstract: A new second-order matrix formulation is proposed in this work to model any nonlinear electronic system. This new formulation is developed and implemented by using a recasting method that ...
Together, the simulation-based training leaders advance a shared mission to elevate operator productivity, safety, and workforce readiness worldwide. MONTREAL, Dec. 16, 2025 /PRNewswire/ - CM Labs ...
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