Abstract: In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled ...
Abstract: Ga2O3 Schottky barrier diodes (SBDs) featuring a field plate (FP) and a composite SiO2/SiNx dielectric layer beneath the FP were fabricated, achieving a breakdown voltage (BV) of 2.4 kV at ...
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