Abstract: This study investigates the influence of temperature on single-event burnout (SEB) in n-channel 115-V-rated vertical-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) ...
Analysis of Single-Event Leakage Current Degradation Induced by Heavy-Ion Irradiation in SiC MOSFETs
Abstract: The application of silicon carbide MOSFETs (SiC MOSFETs) in space is severely restricted by single-event burnout (SEB) and single-event leakage current (SELC) induced by heavy ions, yet the ...
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